IXFR14N100Q2 IXYS, IXFR14N100Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFR14N100Q2
• Description: MOSFET N-CH 1KV 9.5A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR14N100Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 7A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 9.5
• Rds(on), Max, Tj=25°c, (?): 1.10
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 83
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 200
• Rthjc, Max, (ºc/w): 0.62
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1 0000
1 000
1 00
42
35
28
21
1 4
1 0
21
1 8
1 5
1 2
7
0
9
6
3
0
0.3
0
4
Fig. 9. Source Current vs. Source-To-Drain
f = 1 M Hz
5
4.5
0.5
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
1 0
= 1 20
-40
25
º
º
5
T
º
C
C
1 5
C
V
J
V
0.7
V
= 1 25
GS
SD
DS
Voltage
- Volts
- Volts
- Volts
5.5
20
º
C
0.9
25
6
T
C iss
C oss
C rss
J
30
= 25
1 .1
6.5
º
C
35
40
1 .3
7
0.01
28
24
20
0.1
0.01
1 0
1 6
1 2
8
6
4
2
0
8
4
0
0.1
1
1
0
0
1
1
Fig. 12. Maximum Transient Thermal
Fig. 12. Maximum Transient Thermal
1 0
T
V
I
I
3
D
G
J
D S
= 7A
= 1 0mA
= -40
1 25
Fig. 8. Transconductance
= 500V
25
20
Pulse Width - milliseconds
º
º
Pulse Width - milliseconds
º
6
C
Fig. 10. Gate Charge
C
C
Q
30
1 0
G
Resistance
10
Resistance
I
- nanoCoulombs
9
D
- Amperes
40
IXFR14N100Q2
1 2
50
1 5
1 00
60
1 00
1 8
70
21
80
1 000
1 000
24
90