IXFK48N50Q IXYS, IXFK48N50Q Datasheet - Page 2

• Manufacturer Part Number: IXFK48N50Q
• Description: MOSFET N-CH 500V 48A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK48N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 48
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 8000
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
thJC
thCK
SD
iss
oss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
GS
DS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
= 25A,-di/dt = 100 A/µs, V
, V
GS
GS
GS
G
= 1 Ω (External),
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
Note 1
DSS
DSS
(T
(T
J
J
R
, I
, I
= 100 V
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
30
Characteristic Values
Characteristic Values
7000
0.15
typ.
typ.
960
230
190
1.0
10
42
33
22
75
10
40
86
0.26
max.
max.
192
250
1.5
48
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
TO-264 AA Outline
PLUS 247
Terminals:
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
1
2
1
2
20.80
15.75
19.81
25.91
19.81
20.32
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
TM
Millimeter
Millimeter
5.45 BSC
5.46 BSC
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Outline
26.16
19.96
20.83
Max.
21.34
16.13
20.32
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
6,534,343
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190