IXFK48N50Q IXYS, IXFK48N50Q Datasheet - Page 4

• Manufacturer Part Number: IXFK48N50Q
• Description: MOSFET N-CH 500V 48A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK48N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 48
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 8000
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
100
100
60
54
48
42
36
30
24
18
12
90
80
70
60
50
40
30
20
10
6
0
0
3.5
0.3
0
Fig. 9. Source Current vs. Source-To-
0.4
5
4
T
Fig. 11. Capacitance
J
Fig. 7. Input Adm ittance
0.5
f = 1MHz
= 125ºC
10
-40ºC
25ºC
T
4.5
J
0.6
= 125ºC
Drain Voltage
V
15
V
V
G S
S D
D S
0.7
- Volts
- Volts
20
- Volts
5
0.8
25
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
T
5.5
0.9
J
= 25ºC
C iss
C oss
C rss
30
1
6
35
1.1
6.5
1.2
40
0.01
0.1
80
70
60
50
40
30
20
10
10
0
1
9
8
7
6
5
4
3
2
1
0
Fig. 12. Maxim um Transient Therm al
0
1
0
20
6
V
I
I
T
D
G
DS
J
Fig. 8. Transconductance
= 24A
= 10mA
= -40ºC
125ºC
= 250V
12
40
25ºC
Fig. 10. Gate Charge
Pulse Width - milliseconds
18
60
Q
Resistance
10
G
I
- nanoCoulombs
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
24
D
80
- Amperes
100 120 140 160 180 200
30
36
100
42
6,534,343
48
54
1000
60