IXKH47N60C IXYS, IXKH47N60C Datasheet
IXKH47N60C
Manufacturer Part Number
IXKH47N60C
Description
MOSFET N-CH 600V 47A TO-247
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKH47N60C.pdf
(4 pages)
Specifications of IXKH47N60C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
4V @ 2mA
Gate Charge (qg) @ Vgs
650nC @ 10V
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Power Dissipation
290 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
47
Rds(on), Max, Tj=25°c, (?)
0.070
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
250
Trr, Max, (ns)
-
Trr, Typ, (ns)
-
Pd, (w)
290
Rthjc, Max, (k/w)
0.30
Visol, Rms, (v)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXKH47N60C
Manufacturer:
VISHAY
Quantity:
6 000
CoolMOS
Low R
Superjunction MOSFET
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
E
E
dV/dt
Symbol
R
V
I
I
C
C
Q
Q
Q
t
t
t
t
R
DSS
GSS
D25
D100
d(on)
r
d(off)
f
GS(th)
GS
DSS
AS
AR
DSon
iss
oss
thJC
g
gs
gd
Pulse test, t < 300 µs, duty cycle d < 2%
DSon
, high V
Conditions
T
T
T
single pulse I
repetitive
MOSFET dV/dt ruggedness V
Conditions
V
V
V
V
V
f = 1 MHz
V
V
I
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 47 A; R
= 25°C
= 100°C
= 25°C
= V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 10 V; V
DSS
GS
™ 1)
; I
; V
DSS
D
DS
G
D
= 2 mA
GS
DS
= 4.7 Ω
= I
I
= 100 V
D
D
DS
= 0 V
= 380 V
Power MOSFET
= 10 A; T
= 20 A; T
D100
= 0 V
DS
= 350 V; I
C
C
= 25°C
= 25°C
T
T
VJ
VJ
D
DS
(T
= 25°C
= 150°C
= 40 A
= 0...480 V
VJ
= 25°C, unless otherwise specifi ed)
min.
2
Characteristic Values
Maximum Ratings
typ.
255
110
111
tbd
tbd
60
30
20
27
10
G
1800
max.
±100
± 20
600
250
650
tbd
tbd
0.3
47
30
70
25
4
S
V/ns
D
K/W
mΩ
mJ
mJ
nC
nC
nC
µA
µA
nA
pF
pF
ns
ns
ns
ns
V
V
A
A
V
V
I
R
TO-247
Features
• 3rd generation Superjunction power
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
D25
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
- low thermal resistance
DSS
DS(on) max
inductive switching (UIS)
due to reduced chip thickness
E72873
1)
G
CoolMOS
Infi neon Technologies AG.
D
S
IXKH 47N60C
= 600 V
= 47 A
= 70 mΩ
™
is a trademark of
20080523a
1 - 4
tab
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IXKH47N60C Summary of contents
Page 1
... 4.7 Ω d(off thJC Pulse test, t < 300 µs, duty cycle d < 2% IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved G Maximum Ratings 600 ± 25°C 1800 C = 25°C tbd C = 0...480 V tbd DS Characteristic Values (T = 25° ...
Page 2
... D1 0.515 D2 0.020 E1 0.530 ØP1 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. max. = 640 V R Maximum Ratings -55...+150 -55...+150 1 ...
Page 3
... I - Amperes D IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 180 160 140 120 100 4. 2.5 3 3.5 2.8 = 10V GS 5V 2.5 2.2 4.5V 1 ...
Page 4
... 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 Volts DS IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 100 4 25ºC J 0.8 0 iss 0.1 C oss ...