IXKH47N60C IXYS, IXKH47N60C Datasheet - Page 4

• Manufacturer Part Number: IXKH47N60C
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKH47N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 650nC @ 10V
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 290 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 47
• Rds(on), Max, Tj=25°c, (?): 0.070
• Ciss, Typ, (pf): 6800
• Qg, Typ, (nc): 250
• Trr, Max, (ns): -
• Trr, Typ, (ns): -
• Pd, (w): 290
• Rthjc, Max, (k/w): 0.30
• Visol, Rms, (v): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
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Fig. 9. Source Current vs. Source-To-
10
2.5
0.5
f = 1MHz
Fig. 11. Capacitance
20
Fig. 7. Input Adm ittance
3
0.6
30
T
J
Drain Voltage
= 125ºC
3.5
V
V
40
V
T
-40ºC
G S
S D
25ºC
0.7
J
DS
= 125ºC
- Volts
- Volts
- Volts
50
4
0.8
60
4.5
70
0.9
T
J
5
C
= 25ºC
C
C
iss
80
oss
rss
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1
90
100
1.1
6
0.01
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0.1
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1
0
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Fig. 12. Maxim um Transient Therm al
1
0
0
T
J
V
I
I
30
D
G
Fig. 8. Transconductance
= -40ºC
DS
= 40A
125ºC
= 10mA
20
25ºC
= 350V
Fig. 10. Gate Charge
60
Pulse Width - milliseconds
Q
Resistance
10
90
40
G
I
- nanoCoulombs
D
- Amperes
120
60
IXKH 47N60C
150
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240
20080523a
1000
120
270
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