IXFX21N100Q IXYS, IXFX21N100Q Datasheet - Page 3

• Manufacturer Part Number: IXFX21N100Q
• Description: MOSFET N-CH 1000V 21A PLUS 247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX21N100Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 21
• Rds(on), Max, Tj=25°c, (?): 0.50
• Ciss, Typ, (pf): 5900
• Qg, Typ, (nc): 170
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
Fig. 5. Drain Current vs. Case Temperature
Fig. 1. Output Characteristics at 25
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
24
20
16
12
0
8
4
0
-50
0
0
Fig. 3. R
V
-25
GS
T
5
J
= 10V
= 25
5
0
O
C
DS(ON)
10
T
I
D
25
C
T
V
10
J
- Amperes
- Degrees C
DS
T
= 125
J
vs. Drain Current
= 25
V
- Volts
15
50
GS
O
O
C
= 10V
C
15
9V
8V
75
20
100 125 150
20
25
7V
6V
5V
o
C
25
30
25
20
15
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 2. Output Characteristics at 125
30
25
20
15
10
5
0
5
0
4.0
0
-25
Fig. 6. Admittance Curves
T
4.5
V
J
5
GS
= 125
Fig. 4. R
0
= 10V
O
T
C
5.0
J
10
25
= 125
T
J
V
V
- Degrees C
GS
DS
o
C
V
DS(ON)
50
5.5
T
- Volts
GS
- Volts
15
J
IXFK 21N100Q
IXFX 21N100Q
= 25
= 10V
I
I
D
D
9V
8V
7V
= 21A
75
o
= 10.5A
C
vs. T
5V
6V
6.0
T
20
J
= -40
100 125 150
J
o
C
6.5
25
7.0
30
o
C