IXFX21N100Q IXYS, IXFX21N100Q Datasheet - Page 4

• Manufacturer Part Number: IXFX21N100Q
• Description: MOSFET N-CH 1000V 21A PLUS 247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX21N100Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 21
• Rds(on), Max, Tj=25°c, (?): 0.50
• Ciss, Typ, (pf): 5900
• Qg, Typ, (nc): 170
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Fig. 9. Source Current vs. Source to Drain Voltage
10.0
7.5
5.0
2.5
0.0
Fig. 7. Gate Charge Characteristic Curve
25
20
15
10
5
0
0.100
0.010
0.001
0.300
0
0.2
V DS = 500 V
10
I D = 10.5 A
I G = 10 mA
25
-4
0.4
50
Gate Charge - nC
T J = 125 o C
V
75
SD
- Volts
0.6
100
10
-3
125
T J = 25 o C
0.8
Fig. 10. Thermal Impedance
150
175
1.0
10
Pulse Width - Seconds
4,835,592
4,850,072
-2
4,881,106
4,931,844
10000
5000
2500
1000
500
250
100
50
0
10
5,017,508
5,034,796
-1
Fig. 8. Capacitance Curves
5
Ciss
10
5,049,961
5,063,307
Coss
15
Single Pulse
V
DS
Crss
- Volts
20
IXFK 21N100Q
IXFX 21N100Q
10
5,187,117
5,237,481
0
25
f = 1MHz
30
5,486,715
5,381,025
35
40
10
6,306,728B1
1