IXFK66N50Q2 IXYS, IXFK66N50Q2 Datasheet

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IXFK66N50Q2

Manufacturer Part Number
IXFK66N50Q2
Description
MOSFET N-CH 500V 66A TO-264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFK66N50Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
66A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
8400pF @ 25V
Power - Max
735W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.074 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
66 A
Power Dissipation
735 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.08
Ciss, Typ, (pf)
9125
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
735
Rthjc, Max, (ºc/w)
0.17
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFK66N50Q2
Manufacturer:
TI
Quantity:
5 600
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic R
© 2004 IXYS All rights reserved
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
JM
L
J
stg
DSS
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
g
DM
, low t
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 3mA
= 8 mA
rr
, V
= 0.5 • I
G
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
g
IXFK 66N50Q2
IXFX 66N50Q2
TO-264
PLUS-247
TO-264
JM
,
min.
500
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.9/6 Nm/lb.in.
150
500
500
±30
±40
264
735
300
4.0
66
66
75
20
10
6
max.
±200
4.5
50
80 mΩ
2 mA
V/ns
mJ
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
PLUS 247
TO-264 AA (IXFK)
G = Gate
S = Source
Features
Advantages
D25
rr
Double metal process for low gate
International standard packages
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
resistance
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 250 ns
G
TM
D
(IXFX)
G
=
=
=
D
S
D = Drain
TAB = Drain
500 V
66 A
80 mΩ Ω Ω Ω Ω
DS98983A(7/04)
D (TAB)
D (TAB)

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IXFK66N50Q2 Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFK 66N50Q2 IXFX 66N50Q2 g Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 66 264 4.0 ≤ DSS 735 -55 ... +150 150 -55 ... +150 ...

Page 2

... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 3

... Fig Norm alize d to DS(on) 0.5 I Value vs. I D25 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2004 IXYS All rights reserved º C 160 140 6V 120 100 5. º C 3.1 2 2.5 6V 2.2 1.9 5.5V 1.6 5V 1.3 4 ...

Page 4

... T = 125º 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 25ºC J 0.9 1 1.1 1.2 1.3 1000 C iss 100 C oss 10 C rss 25 30 ...

Page 5

... Fig . © 2004 IXYS All rights reserved illis IXFK 66N50Q2 IXFX 66N50Q2 ...

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