IXFK66N50Q2 IXYS, IXFK66N50Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFK66N50Q2
• Description: MOSFET N-CH 500V 66A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK66N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 66A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 8400pF @ 25V
• Power - Max: 735W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.074 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 66 A
• Power Dissipation: 735 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.08
• Ciss, Typ, (pf): 9125
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 735
• Rthjc, Max, (ºc/w): 0.17
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
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90
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80
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0
0
0.4
3
0
f = 1MHz
0.5
3.5
5
T
J
T
J
Fig. 11. Capacitance
= 125ºC
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
0.6
Source-To-Drain Voltage
= 125ºC
-40ºC
10
25ºC
4
0.7
V
4.5
V
15
V
G S
S D
D S
0.8
- Volts
- Volts
20
- Volts
5
T
0.9
J
C oss
C rss
C iss
= 25ºC
5.5
25
1
30
6
1.1
6.5
35
1.2
1.3
40
7
1000
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40
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20
10
10
10
0
9
8
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1
0
1
10
0
0
T
R
V
I
I
J
T
T
D
G
20
DS(on)
DS
J
C
= -40ºC
125ºC
= 33A
= 10mA
Fig. 8. Transconductance
= 150ºC
= 25ºC
25ºC
20
= 250V
40
Fig. 10. Gate Charge
Limit
Fig. 12. Forw ard-Bias
Safe Operating Area
Q
60
40
G
I
- nanoCoulombs
D
V
80
- Amperes
D S
DC
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100
60
- Volts
IXFK 66N50Q2
IXFX 66N50Q2
80
100
100µs
1ms
25µs
10ms
1000
120