IXFB100N50P IXYS, IXFB100N50P Datasheet - Page 2

• Manufacturer Part Number: IXFB100N50P
• Description: MOSFET N-CH 500V 100A PLUS264
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFB100N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 20000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.049 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 1250 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.049
• Ciss, Typ, (pf): 20000
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.1
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
V
F
F
GS
R
DS
GS
GS
G
GS
= I
= 25A, -di/dt = 100 A/µs
= 100V
= 0 V
= 20 V; I
= 10 V, V
= 1 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V, Note 1
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
4,850,072
4,881,106
= 0.5 V
= 0.5 V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
(T
(T
= 0.5 I
=0.5 I
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
50
Characteristic Values
Characteristic Values
1700
Typ. Max.
Typ. Max.
0.13
140
110
240
0.6
6.0
6,162,665
6,259,123 B1
6,306,728 B1
80
20
36
29
26
96
78
0.10 ° C/W
100
250
200
1.5
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
PLUS264
6,683,344
6,710,405B2
6,710,463
TM
(IXFB) Outline
6,727,585
6,759,692
6,771,478 B2
IXFB 100N50P