IXFB100N50P IXYS, IXFB100N50P Datasheet - Page 3

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IXFB100N50P

Manufacturer Part Number
IXFB100N50P
Description
MOSFET N-CH 500V 100A PLUS264
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFB100N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.049 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
100 A
Power Dissipation
1250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.049
Ciss, Typ, (pf)
20000
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.1
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB100N50P
Manufacturer:
ATMEL
Quantity:
363
Part Number:
IXFB100N50P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2006 IXYS All rights reserved
100
100
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
3
2
1
0
0
0
Fig. 5. R
V
0.5
20
1
GS
= 10V
40
1
2
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
1.5
60
3
vs. Drain Current
Normalized to I
80
I
4
2
D
V
V
- Amperes
DS
DS
@ 125ºC
@ 25ºC
100
2.5
5
- Volts
- Volts
V
GS
120
6
3
V
= 10V
GS
T
T
J
J
8V
140
= 125ºC
= 25ºC
3.5
6V
5V
= 10V
7V
7
D
8V
7V
6V
5V
= 50A Value
160
8
4
180
4.5
9
200
10
5
220
11
5.5
220
200
180
160
140
120
100
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
80
60
40
20
90
80
70
60
50
40
30
20
10
0
1
0
-50
-50
0
Fig. 4. R
External Lead Current Limit
2
Fig. 2. Extended Output Characteristics
V
-25
-25
GS
Fig. 6. Maximum Drain Current v s.
4
= 10V
DS(on)
V
v s. Junction Temperature
6
GS
0
0
T
T
J
J
Case Temperature
= 10V
8
- Degrees Centigrade
- Degrees Centigrade
9V
Normalized to I
25
25
10
V
8V
7V
6V
DS
@ 25ºC
I
12
- Volts
D
= 100A
50
50
14
IXFB 100N50P
16
75
75
I
D
D
18
= 50A
= 50A Value
100
100
20
22
125
125
24
150
150
26

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