IXFB120N50P2 IXYS, IXFB120N50P2 Datasheet - Page 4

• Manufacturer Part Number: IXFB120N50P2
• Description: MOSFET N-CH 500V 120A PLUS264
• Manufacturer: IXYS
• Series: PolarP2™ HiPerFET™r
• Type: PolarP2 HiPerFETr

Specifications of IXFB120N50P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 43 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 1890W
• Mounting Type: Through Hole
• Package / Case: PLUS264™
• Product: MOSFET Gate Drivers
• Rise Time: 13 ns
• Fall Time: 12 ns
• Supply Current: 120 A
• Maximum Power Dissipation: 1890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 80 ns
• Maximum Turn-on Delay Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 120 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.043
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 300
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1890
• Rthjc, Max, (ºc/w): 0.066
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
120
100
100
50
80
60
40
20
10
0
0
0.3
3.0
0
0.4
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
3.5
5
0.5
0.6
4.0
10
Fig. 7. Input Admittance
T
0.7
J
Fig. 11. Capacitance
= 125ºC
4.5
15
0.8
V
V
V
SD
DS
GS
0.9
5.0
- Volts
20
- Volts
- Volts
T
J
T
= 125ºC
J
1.0
- 40ºC
25ºC
= 25ºC
5.5
25
C iss
1.1
C oss
C rss
1.2
6.0
30
1.3
6.5
35
1.4
1.5
7.0
40
1000
160
140
120
100
100
0.1
10
80
60
40
20
10
0
1
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
Single Pulse
J
C
V
I
I
10
D
G
R
= 150ºC
DS
= 25ºC
DS(on)
= 60A
= 10mA
= 250V
Fig. 12. Forward-Bias Safe Operating Area
20
50
Limit
30
Fig. 8. Transconductance
100
40
Fig. 10. Gate Charge
Q
G
50
- NanoCoulombs
I
D
V
IXFB120N50P2
- Amperes
DS
150
100
60
- Volts
70
T
J
= - 40ºC
200
80
25ºC
125ºC
90
100
250
25µs
100µs
1ms
110
1,000
120
300