IXFB120N50P2 IXYS, IXFB120N50P2 Datasheet - Page 5

• Manufacturer Part Number: IXFB120N50P2
• Description: MOSFET N-CH 500V 120A PLUS264
• Manufacturer: IXYS
• Series: PolarP2™ HiPerFET™r
• Type: PolarP2 HiPerFETr

Specifications of IXFB120N50P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 43 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 1890W
• Mounting Type: Through Hole
• Package / Case: PLUS264™
• Product: MOSFET Gate Drivers
• Rise Time: 13 ns
• Fall Time: 12 ns
• Supply Current: 120 A
• Maximum Power Dissipation: 1890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 80 ns
• Maximum Turn-on Delay Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 120 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.043
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 300
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1890
• Rthjc, Max, (ºc/w): 0.066
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFB120N50P2
Fig. 13. Maximum Transient Thermal Impedance
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: F_120N50P2(9S)7-02-10-A