IXFB210N20P IXYS, IXFB210N20P Datasheet - Page 4

• Manufacturer Part Number: IXFB210N20P
• Description: MOSFET N-CH 200V 210A PLUS264
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFB210N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 210A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 18600pF @ 25V
• Power - Max: 1500W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 210
• Rds(on), Max, Tj=25°c, (?): 0.0105
• Ciss, Typ, (pf): 18.6
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1500
• Rthjc, Max, (ºc/w): 0.1
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
350
300
250
200
150
100
180
160
140
120
100
50
10
80
60
40
20
0
0
0.2
3.0
0
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
f
0.4
= 1 MHz
0.5
10
4.0
T
J
= 150ºC
Fig. 11. Capacitance
0.6
Fig. 7. Input Admittance
15
4.5
V
V
V
0.7
SD
DS
GS
T
- Volts
- Volts
- Volts
J
0.8
20
= 150ºC
5.0
T
J
0.9
= 25ºC
25
1.0
25ºC
5.5
C isss
C oss
C rss
1.1
30
- 40ºC
6.0
1.2
35
1.3
6.5
1.4
40
1000
100
180
160
140
120
100
0.1
80
60
40
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
R
DS(on)
T
T
Single Pulse
V
I
I
20
J
C
D
G
DS
= 175ºC
External Lead Limit
= 25ºC
= 105A
= 10mA
20
= 100V
Limit
40
Fig. 12. Forward-Bias Safe Operating Area
40
60
Fig. 8. Transconductance
80
60
10
Q
Fig. 10. Gate Charge
G
100
- NanoCoulombs
V
DS
I
D
80
120
- Amperes
- Volts
T
IXFB210N20P
J
= - 40ºC
140
100
25ºC
160
150ºC
120
100
180
DC
200
140
100ms
10ms
25µs
100µs
1ms
220
160
240
1000
180
260