IXFB210N20P IXYS, IXFB210N20P Datasheet - Page 5

• Manufacturer Part Number: IXFB210N20P
• Description: MOSFET N-CH 200V 210A PLUS264
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFB210N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 210A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 18600pF @ 25V
• Power - Max: 1500W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 210
• Rds(on), Max, Tj=25°c, (?): 0.0105
• Ciss, Typ, (pf): 18.6
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1500
• Rthjc, Max, (ºc/w): 0.1
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFB210N20P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: F_210N20P(9S) 5-25-10-A