IXTB62N50L IXYS, IXTB62N50L Datasheet - Page 4
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IXTB62N50L
Manufacturer Part Number
IXTB62N50L
Description
MOSFET N-CH 500V 62A PLUS264
Manufacturer
IXYS
Datasheet
1.IXTB62N50L.pdf
(5 pages)
Specifications of IXTB62N50L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 20V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
550nC @ 20V
Input Capacitance (ciss) @ Vds
11500pF @ 25V
Power - Max
800W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
62 A
Power Dissipation
800 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
62
Rds(on), Max, Tj=25°c, (?)
0.100
Ciss, Typ, (pf)
11500
Qg, Typ, (nc)
550
Trr, Typ, (ns)
500
Pd, (w)
800
Rthjc, Max, (k/w)
0.156
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTB62N50L
Manufacturer:
ST
Quantity:
9 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
250
225
200
175
150
125
100
100
75
50
25
90
80
70
60
50
40
30
20
10
100
0
0
0.5
5
0
T
0.6 0.7
J
6
= 125ºC
f = 1MHz
T
5
J
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Fig. 7. Input Adm ittance
= 125ºC
Source-To-Drain Voltage
7
-40ºC
25ºC
10
0.8 0.9
8
V
V
G S
S D
15
V
T
J
9
D S
- Volts
= 25ºC
- Volts
1
20
- Volts
C iss
C oss
C rss
1 0
1.1
25
1 1
1.2 1.3
1 2
30
1 3
1.4 1.5
35
1 4
40
30
27
24
21
18
15
12
20
18
16
14
12
10
9
6
3
0
8
6
4
2
0
0
0
10
V
I
I
D
G
T
DS
Fig. 8. Transconductance
J
= 31A
= 10mA
100
= -40ºC
20
125ºC
= 250V
Fig. 10. Gate Charge
25ºC
30
Q
G
200
I
- nanoCoulombs
40
D
- Amperes
50
300
60
IXTB62N50L
70
400
80
90
500
100