IXTB62N50L IXYS, IXTB62N50L Datasheet - Page 5

• Manufacturer Part Number: IXTB62N50L
• Description: MOSFET N-CH 500V 62A PLUS264
• Manufacturer: IXYS

Specifications of IXTB62N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 550nC @ 20V
• Input Capacitance (ciss) @ Vds: 11500pF @ 25V
• Power - Max: 800W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 62
• Rds(on), Max, Tj=25°c, (?): 0.100
• Ciss, Typ, (pf): 11500
• Qg, Typ, (nc): 550
• Trr, Typ, (ns): 500
• Pd, (w): 800
• Rthjc, Max, (k/w): 0.156
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
1000
100
1.000
0.100
0.010
0.001
0.1
10
1
10
0.1
R
DS(
Operating Area @ T
Fig. 12. Forw ard-Bias Safe
on
)
Limit
V
D S
100
- Volts
Fig. 14. Maximum Transient Thermal Impedance
C
1
= 25ºC
DC
T
J
= 150ºC
100µs
1ms
25µs
10ms
Pulse Width - milliseconds
1000
10
1000
100
0.1
10
1
10
R
DS(
Operating Area @ T
Fig. 13. Forw ard-Bias Safe
on
)
Limit
V
100
D S
100
- Volts
IXYS REF: T_62N50L (9N) 4-05-07-A.xls
C
IXTB62N50L
= 90ºC
DC
T
J
= 150ºC
100µs
1ms
25µs
10ms
1000
1000