TPCF8B01(TE85L,F,M Toshiba, TPCF8B01(TE85L,F,M Datasheet - Page 8
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TPCF8B01(TE85L,F,M
Manufacturer Part Number
TPCF8B01(TE85L,F,M
Description
MOSFET P-CH SBD 20V 2.7A 2-3U1C
Manufacturer
Toshiba
Datasheet
1.TPCF8B01TE85LFM.pdf
(9 pages)
Specifications of TPCF8B01(TE85L,F,M
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
1.35W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.7 A
Power Dissipation
1.35 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
0.0001
0.001
0.01
0.1
10
1
0
Pulse test
20
Junction temperature T j (°C)
40
60
I
5V
R
– T
80
10V
j
100
V
R
=20V
120
(typ.)
140
160
8
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
V
Conduction angle:α
R
0°
Tj=125℃
Rectangular
waveform
α
360°
5
Reverse voltage V R (V)
P
R (AV)
60°
120°
10
– V
R
180°
240°
TPCF8B01
15
2009-09-29
(typ.)
300°
DC
20