2SK3301(TE16L1,NQ) Toshiba, 2SK3301(TE16L1,NQ) Datasheet

2SK3301(TE16L1,NQ)

Manufacturer Part Number

2SK3301(TE16L1,NQ)

Description

MOSFET N-CH 900V 1A SC-64

Manufacturer

Toshiba

Datasheet

1.2SK3301TE16L1NQ.pdf (3 pages)

Specifications of 2SK3301(TE16L1,NQ)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

20 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

900V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3.4V @ 1mA

Gate Charge (qg) @ Vgs

6nC @ 10V

Input Capacitance (ciss) @ Vds

165pF @ 25V

Power - Max

20W

Mounting Type

Surface Mount

Package / Case

2-7J1B

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

20 Ohms

Drain-source Breakdown Voltage

900 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

1 A

Power Dissipation

20 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Switching Regulatorand DC-DC Converter Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by max junction temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)

= 1 A

= 90 V, T

Pulse (Note 1)

DSS

= 20 kΩ)

= 2.4 to 3.4 V (V

= 25°C (initial), L = 257 mH, R

(Note 1)

= 100 μA (max) (V

(Note 2)

DS (ON)

(Ta = 25°C)

| = 0.65 S (typ.)

Symbol

DGR

GSS

DSS

stg

2SK3301

Symbol

= 15 Ω (typ.)

th (ch-c)

th (ch-a)

= 10 V, I

= 720 V)

−55 to 150

Rating

900

±30

140

150

2.0

= 1 mA)

Max

6.25

125

= 25 Ω,

°C/W

Unit

°C

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

2-7J1B

SC-64

2010-02-05

―

2SK3301

Unit: mm

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2SK3301(TE16L1,NQ) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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