TPCA8008-H(TE12LQM Toshiba, TPCA8008-H(TE12LQM Datasheet - Page 6

• Manufacturer Part Number: TPCA8008-H(TE12LQM
• Description: MOSFET N-CH 250V 4A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8008-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 580 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
2.5
0.1
1.5
0.5
10
1
3
2
0
1
0
1
I D max (Continuous)
Curves must be derated
linearly
temperature.
I D max (Pulse) *
* Single - Pulse
Tc = 25°C
(2)
(1)
Drain-source voltage V
Ambient temperature Ta (°C)
with
40
1000
100
Safe operating area
0.1
10
0.001
DC Operation
increase
1
10
Tc = 25°C
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
P
D
in
80
– Ta
V DSS max
(1) Device mounted on
a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on
a glass-epoxy board (b)
(Note 2b)
t = 10s
0.01
100
t =1ms *
DS
10ms *
120
(V)
0.1
1000
160
Pulse width t
r
6
th
– t
1
w
w
(s)
60
40
20
0
10
0
Case temperature Tc (°C)
40
100
Single pulse
P
D
80
– Tc
(2)
(1)
(3)
1000
TPCA8008-H
120
2007-12-18
160