TPCA8016-H(TE12LQM Toshiba, TPCA8016-H(TE12LQM Datasheet - Page 4

• Manufacturer Part Number: TPCA8016-H(TE12LQM
• Description: MOSFET N-CH 60V 25A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8016-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1375pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8016-H(TE12L,Q; TPCA8016HTE12LQMTR; TPCA8016HTE12LQTR; TPCA8016HTE12LQTR

100
100
80
40
20
60
10
0.1
20
16
12
0
1
8
4
0
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Ta = −55°C
4.5
Drain-source voltage V
Gate-source voltage V
5
0.2
25
6
2
Drain current I
8
100
10
1
0.4
⎪Y
I
I
D
D
fs
25
Ta = −55°C
– V
– V
⎪ – I
4
3.7
4
DS
GS
0.6
D
D
10
Common source
Ta = 25°C
Pulse test
GS
DS
(A)
100
3.5
6
V GS = 2.8 V
0.8
(V)
(V)
3.3
3.1
100
1.0
8
4
100
1.0
0.8
0.6
0.4
0.2
10
50
40
30
20
10
0
1
0
0.1
0
0
Common source
Ta = 25°C
Pulse test
5
6
8
10
Drain-source voltage V
Gate-source voltage V
1
2
Drain current I
4.5
1
R
V
DS (ON)
2
4
I
DS
D
– V
4.5 V
– V
V GS = 10 V
DS
GS
– I
4
3
6
D
D
10
Common source
Ta = 25°C
Pulse test
GS
DS
Common source
Ta = 25℃
Pulse test
(A)
TPCA8016-H
I D = 25 A
4
(V)
(V)
8
V GS = 3 V
13
2006-11-17
6.3
3.8
3.5
3.3
100
10
5