2SK2614(TE16L1,Q) Toshiba, 2SK2614(TE16L1,Q) Datasheet

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2SK2614(TE16L1,Q)

Manufacturer Part Number
2SK2614(TE16L1,Q)
Description
MOSFET N-CH 50V 20A SC-64
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2614(TE16L1,Q)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
40W
Mounting Type
Surface Mount
Package / Case
2-7B5B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain-source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high
Thermal resistance, channel to case
Thermal resistance, channel to ambient
This transistor is an electrostatic-sensitive device. Handle with care.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Characteristic
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
: I
: V
DSS
th
= 0.8 to 2.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
T
I
T
DGR
P
GSS
DSS
I
DP
stg
D
ch
D
DS (ON)
2SK2614
fs
| = 13 S (typ.)
DS
= 10 V, I
DS
= 0.032 Ω (typ.)
−55 to 150
= 50 V)
Rating
3.125
Max
±20
150
125
50
50
20
50
40
1
D
= 1 mA)
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
0.6 ± 0.15
0.95 MAX.
JEDEC
JEITA
TOSHIBA
0.6 ± 0.15
0.95 MAX.
JEDEC
JEITA
TOSHIBA
0.6 ± 0.15
1. GATE
2. DRAIN
3. SOURSE
1. GATE
2. DRAIN
3. SOURSE
(HEAT SINK)
(HEAT SINK)
1
2
1
6.8 MAX.
5.2 ± 0.2
−π−MOSV)
2.3
2.3
5.2 ± 0.2
2.3
6.8 MAX.
2
2
2.3
2.3
2.3
3
3
2-7B5B
2-7B7B
SC-64
2009-12-21
2SK2614
1
Unit: mm
1
0.6 MAX.
0.6 MAX.
0.6 MAX.
2
3
0.6 MAX.
2
3

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2SK2614(TE16L1,Q) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON-resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement mode : V = 0 Absolute Maximum Ratings Characteristic ...

Page 2

... Note line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – Common source 25°C 10 Pulse test 0.2 0.4 0.6 0.8 Drain-source voltage V DS (V) I – V ...

Page 4

R – (ON) 0.20 Common source Pulse test 0. −80 − Case temperature Tc (°C) Capacitance ...

Page 5

SINGLE PULSE SAFE OPERATING AREA 300 100 I D max (pulse)* 50 100 μ max (continuous OPERATION 3 T =25° Single pulse 0.5 °C Tc=25 0.3 Curves must be ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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