2SK2782(TE16L1,Q) Toshiba, 2SK2782(TE16L1,Q) Datasheet - Page 4

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2SK2782(TE16L1,Q)

Manufacturer Part Number
2SK2782(TE16L1,Q)
Description
MOSFET N-CH 60V 20A SC-64
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2782(TE16L1,Q)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
880pF @ 10V
Power - Max
40W
Mounting Type
Surface Mount
Package / Case
2-7B5B
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2SK2782
4
2009-12-21

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