TPCA8003-H(TE12L,Q Toshiba, TPCA8003-H(TE12L,Q Datasheet - Page 6

• Manufacturer Part Number: TPCA8003-H(TE12L,Q
• Description: MOSFET N-CH 30V 35A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8003-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1465pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8003-HTR

1000
100
2.5
1.5
0.5
0.1
10
1
3
2
1
0
0.1
0
I D max (Continuous)
* Single - pulse
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
Ta = 25℃
(1)
(2)
Drain-source voltage V
Ambient temperature Ta (
1000
40
DC Operation
100
0.1
10
0.001
Safe operating area
Tc = 25℃
1
1
(1) Device mounted on a glass-epoxy board (a)
(2) Device mounted on a glass-epoxy board (b)
(3) Tc=25℃
P
(Note 2a)
(Note 2b)
D
(1)Device mounted on a
(2)Device mounted on a
ｔ＝10s
80
glass-epoxy board(a) (Note 2a)
glass-epoxy board(b) (Note 2b)
– Ta
0.01
t=1ms *
V DSS max
10
DS
120
10ms *
(V)
°
C)
0.1
160
100
Pulse width t
r
r
6
th
th
– t
– t
1
w
w
w
(s)
50
40
30
20
10
0
0
10
Case temperature T
40
100
Single - pulse
P
(3)
D
(2)
(1)
80
– Tc
1000
C
TPCA8003-H
120
(
°
C)
2006-11-16
160