2SK2311(TE24L,Q) Toshiba, 2SK2311(TE24L,Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK2311(TE24L,Q)
• Description: MOSFET N-CH 60V 25A 2-10S2B
• Manufacturer: Toshiba

Specifications of 2SK2311(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 40 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K2311
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
t
Q
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
V
V
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
DR
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4: A line under a Lot No. identifies the indication of product
= 10 mA, V
= 25 A, V
= 25 A, V
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
≈ 48 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
/ dt = 50 A / μs
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
D
2
D
D
D
GS
GS
GS
(Ta = 25°C)
GS
= 12 A
GS
GS
Test Condition
Test Condition
= 1 mA
= 12 A
DS
= 12 A
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
—
D
= 25 A
Min
Min
0.8
60
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Typ.
Typ.
200
550
130
—
—
—
—
57
36
16
20
30
55
38
25
13
—
—
—
50
35
2009-09-29
−1.8
2SK2311
Max
Max
±10
100
100
2.0
80
46
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mΩ
μA
μA
nC
μC
pF
ns
ns
V
V
S
A
A
V