2SK4014(Q) Toshiba, 2SK4014(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK4014(Q)
• Description: MOSFET N-CH 900V 6A SC-67
• Manufacturer: Toshiba

Specifications of 2SK4014(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
16
12
10
5
4
3
2
1
0
8
4
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
DRAIN−SOURCE VOLTAGE V
GATE−SOURCE VOLTAGE V
2
2
DRAIN CURRENT I
Tc = −55°C
100
4
⎪Y
4
I
I
D
D
fs
– V
– V
⎪ − I
25
1
DS
GS
D
6
6
Tc = −55°C
25
8
D
10
(A)
GS
DS
8
8
V GS = 4 V
100
(V)
(V)
6
4.75
5.25
4.5
5
10
10
10
3
0.1
10
20
16
12
10
1
8
6
4
2
0
8
4
0
0.1
0
0
Common source
Tc = 25°C
Pulse test
DRAIN−SOURCE VOLTAGE V
GATE−SOURCE VOLTAGE V
10
4
DRAIN CURRENT I
8
10
R
20
V
DS (ON)
8
I
DS
D
– V
V GS = 10 V
– V
1
5.75
DS
6
GS
− I
30
12
5.25
V GS = 4 V
5.5
4.5
D
5
D
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
(A)
DS
GS
40
16
(V)
(V)
I D = 6 A
2010-01-29
2SK4014
1.5
3
50
20
10