2SK3309(Q) Toshiba, 2SK3309(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3309(Q)
• Description: MOSFET N-CH 450V 10A 2-10S1B
• Manufacturer: Toshiba

Specifications of 2SK3309(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 10V
• Power - Max: 65W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Common source
V DS = 20 V
Pulse test
2
Drain-source voltage V
2
Gate-source voltage V
Drain current I
4
1
Tc = −55°C
4
⎪Y
I
I
15
D
D
100
fs
25
– V
– V
⎪ – I
6
DS
10
GS
D
6
D
10
100
8
GS
DS
(A)
8.5
Tc = −55°C
V GS = 6 V
25
(V)
(V)
8
10
7.5
8
7
100
10
12
3
0.1
10
20
16
12
10
1
8
4
0
8
6
4
2
0
1
0
0
Common source
Tc = 25°C
Pulse test
15
10
Drain-source voltage V
4
Gate-source voltage V
V GS = 10, 15 V
Drain current I
10
R
20
V
DS (ON)
8
I
DS
D
– V
10
– V
DS
9
GS
– I
30
12
D
D
8.5
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
8
(V)
(V)
V GS = 6 V
I D = 10 A
40
16
7.5
2.5
7
2006-11-06
5
2SK3309
100
50
20