2SK2883(TE24L,Q) Toshiba, 2SK2883(TE24L,Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK2883(TE24L,Q)
• Description: MOSFET N-CH 800V 3A TO-220
• Manufacturer: Toshiba

Specifications of 2SK2883(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 75 W
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K2883
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Note 1)
V
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
Q
t
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
I
V
I
V
V
V
V
V
I
I
dI
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4: A line under a Lot No. identifies the indication of product
= 10 mA, V
= ±10 μA, V
= 3 A, V
= 3 A, V
= 640 V, V
= 10 V, I
= 20 V, I
= 25 V, V
= ±30 V, V
= 10 V, I
≈ 400 V, V
/ dt = 100 A / μs
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
GS
GS
2
D
D
D
GS
(Ta = 25°C)
GS
DS
Test Condition
Test Condition
= 1 mA
= 1.5 A
DS
GS
= 1.5 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
—
—
D
= 3 A
0.65
±30
800
Min
Min
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
Typ.
750
110
900
3.0
2.6
—
—
—
—
—
10
70
15
55
30
25
13
12
—
—
—
6
2009-09-29
2SK2883
−1.9
Max
Max
±10
100
4.0
3.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
9
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
V
Ω
S
A
A
V