2SK3466(TE24L,Q) Toshiba, 2SK3466(TE24L,Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3466(TE24L,Q)
• Description: MOSFET N-CH 500V 5A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3466(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 10V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.05
0.03
0.01
100
0.5
0.3
0.1
50
30
10
5
3
1
1
* Single nonrepetitive
I D max (pulsed) *
I D max (continuous)
Curves must be derated
linearly with increase in
temperature.
pulse Tc = 25°C
3
Drain-source voltage V DS (V)
5
0.005
0.003
0.05
0.03
0.01
DC operation
10
0.5
0.3
0.1
Safe operating area
10 μ
Tc = 25°C
3
1
Duty = 0.5
0.05
0.02
0.01
0.2
0.1
30 50
30 μ
1 ms *
100 μ
100
Single pulse
V DSS max
100 μs *
300 μ
300 500 1000
1 m
Pulse width t w (s)
3 m
r
th
10 m
5
− t
R
V
w
DD
G
= 25 Ω
30 m
= 90 V, L = 12.2 mH
200
160
120
−15 V
80
40
0
15 V
25
100 m
Test circuit
P DM
Channel temperature (initial) T ch (°C)
300 m
Duty = t/T
R th (ch-c) =2.5°C/W
50
t
T
1
75
E
AS
Ε AS
– T
V
3
DD
=
ch
100
B
Wave form
1
2
VDSS
I
⋅
AR
L
10
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
B VDSS
2010-04-06
2SK3466
150
−
V DD
⎞
⎟
⎟
⎠