2SK3878(F,T) Toshiba, 2SK3878(F,T) Datasheet - Page 3

• Manufacturer Part Number: 2SK3878(F,T)
• Description: MOSFET N-CH 900V 9A SC-65
• Manufacturer: Toshiba

Specifications of 2SK3878(F,T)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
V DS = 20 V
PULSE TEST
COMMON SOURCE
V DS = 20 V
PULSE TEST
DRAIN−SOURCE VOLTAGE V
GATE−SOURCE VOLTAGE V
2
2
Tc = −55°C
DRAIN CURRENT I
1
100
4
4
⎪Y
I
I
D
D
fs
– V
– V
⎪ − I
25
25
DS
GS
D
6
6
100
Tc = −55°C
10
D
(A)
GS
DS
6
V GS = 4.5 V
8
8
10
(V)
(V)
15
4.75
5.25
5.5
5
100
10
10
3
0.1
20
16
12
20
16
12
10
8
4
0
8
4
0
1
0
0
1
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN−SOURCE VOLTAGE V
GATE−SOURCE VOLTAGE V
4
4
DRAIN CURRENT I
V GS = 10 V
R
V
DS (ON)
8
8
I
DS
D
– V
10
– V
DS
GS
− I
12
12
COMMON SOURCE
Tc = 25°C
PULSE TEST
D
D
(A)
GS
DS
16
16
V GS = 4.5 V
10
(V)
(V)
I D = 9 A
2010-05-06
2SK3878
4.5
2.3
15
5.5
5
6
100
20
20