2SK3569(Q,M) Toshiba, 2SK3569(Q,M) Datasheet - Page 3

• Manufacturer Part Number: 2SK3569(Q,M)
• Description: MOSFET N-CH 600V 10A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3569(Q,M)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK3569(Q); 2SK3569Q; 2SK3569Q

100
0.1
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
COMMON SOURCE
V DS = 20 V
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
DRAIN CURRENT I
2
2
100
1
10,8
Tc = −55°C
⎪Y
4
4
I
I
D
D
fs
– V
– V
⎪ – I
6
DS
25
GS
Tc = −55°C
D
100
6
6
COMMON SOURCE
V DS = 20 V
PULSE TEST
10
D
GS
(A)
DS
25
5.3
V GS = 4V
8
8
4.6
4.8
4.4
4.2
(V)
5
(V)
5.1
100
10
10
3
0.1
20
16
12
10
10
8
4
0
1
8
6
4
2
0
0.1
0
0
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
DRAIN CURRENT I
4
10
1
R
V GS = 10 V､15V
V
20
DS (ON)
6
8
I
DS
D
5.5
– V
8
– V
DS
5.25
GS
– I
30
12
COMMON SOURCE
Tc = 25°C
PULSE TEST
5
D
COMMON SOURCE
Tc = 25℃
PULSE TEST
10
D
4.75
V GS = 4 V
4.5
I D = 10 A
GS
(A)
DS
40
16
2010-01-29
2.5
5
2SK3569
(V)
(V)
100
50
20