2SK2602(F,T) Toshiba, 2SK2602(F,T) Datasheet - Page 5
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2SK2602(F,T)
Manufacturer Part Number
2SK2602(F,T)
Description
MOSFET N-CH 600V 6A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK2602FT.pdf
(6 pages)
Specifications of 2SK2602(F,T)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.25 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 10V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.25 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
R
V
5
G
DD
= 25 Ω
= 90 V, L = 16.8 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2010-04-13
2SK2602
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠