2SK3935(Q,M) Toshiba, 2SK3935(Q,M) Datasheet - Page 4

• Manufacturer Part Number: 2SK3935(Q,M)
• Description: MOSFET N-CH 450V 17A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3935(Q,M)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
0.6
0.4
0.2
10
80
60
40
20
0
0
−80
0.1
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
COMMON SOURCE
V GS = 10 V
PULSE TEST
−40
DRAIN S OURCE VOLTAGE V
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
40
0
1
R
DS (ON)
C – V
P
D
I D = 15 A
80
40
– Tc
DS
– Tc
80
10
120
3.8
DS
120
(V)
7.5
C iss
C oss
C rss
160
160
100
4
100
500
400
300
200
100
0.1
10
5
4
3
2
1
0
1
0
−80
0
0
0
10
DRAIN−SOURCE VOLTAGE V
V DS
−40
−0.4
TOTAL GATE CHARGE Q
5
CASE TEMPERATURE Tc (°C)
20
20
DYNAMIC INPUT/OUTPUT
V GS
3
V GS
1
CHARACTERISTICS
0
10
V GS = 0 V
−0.8
40
40
I
DR
V DD = 90 V
V
th
200
– V
40
– Tc
DS
−1.2
60
60
V DD = 400
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
360
COMMON SOURCE
I D = 17 A
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
80
g
180
(nC)
DS
−1.6
80
80
120
(V)
2009-09-29
2SK3935
−2.0
100
100
160
20
20
16
16
12
12
8
8
4
4
0
0