2SK3700(F) Toshiba, 2SK3700(F) Datasheet - Page 3

• Manufacturer Part Number: 2SK3700(F)
• Description: MOSFET N-CH 900V 5A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3700(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.1
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
Common source
Common source
Tc = 25°C
Pulse Test
Common source
V DS = 10 V
Pulse Test
V DS = 10 V
Pulse Test
4
2
Drain-source voltage V DS
Gate-source voltage V GS
Drain current I D (A)
100
8
10
4
⎪Y
I
8
I
D
D
Tc = −55°C
fs
– V
– V
12
⎪ – I
1
DS
GS
D
100
6
25
Tc = −55°C
16
6
V GS = 4.5 V
(V)
(V)
25
8
20
5.5
5.25
4.75
5
24
10
10
3
20
14
12
10
0.01
6
5
4
3
2
1
0
8
4
0
5
3
1
0
0
Common source
Tc = 25°C
Pulse Test
Drain-source voltage V DS
Gate-source voltage V GS
4
Drain current I D (A)
10
0.1
R
V GS = 10 V､15V
V
DS (ON)
8
I
DS
D
10
– V
– V
DS
6
GS
– I
12
I D = 5 A
D
20
Common source
Tc = 25°C
Pulse Test
1
8
Common source
Tc = 25°C
V GS = 10 V
Pulse Test
V GS = 4 .5V
(V)
(V)
3
16
1.5
5.5
5.25
4.75
2009-09-29
5
2SK3700
30
20
10