TK80A08K3(Q) Toshiba

TK80A08K3(Q)

Manufacturer Part Number

TK80A08K3(Q)

Description

MOSFET N-CH 75V 80A TO-220F

Manufacturer

Toshiba

Specifications of TK80A08K3(Q)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.5 mOhm @ 40A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

80A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

175nC @ 10V

Input Capacitance (ciss) @ Vds

8200pF @ 10V

Power - Max

40W

Mounting Type

Through Hole

Package / Case

2-10U1B

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0045 Ohms

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

80 A

Power Dissipation

40 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TK80A08K3Q

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