2SK1359(F) Toshiba, 2SK1359(F) Datasheet - Page 3
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2SK1359(F)
Manufacturer Part Number
2SK1359(F)
Description
MOSFET N-CH 1KV 5A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK1359F.pdf
(6 pages)
Specifications of 2SK1359(F)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.8 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2SK1359
3
2009-09-29