2SK3017(F) Toshiba, 2SK3017(F) Datasheet - Page 4

• Manufacturer Part Number: 2SK3017(F)
• Description: MOSFET N-CH 900V 8.5A 2-16F1B
• Manufacturer: Toshiba

Specifications of 2SK3017(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2150pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: 2-16F1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 8.5 A
• Power Dissipation: 90 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2SK3017
4
2009-09-29