BSS138N L6327 Infineon Technologies, BSS138N L6327 Datasheet - Page 7
![MOSFET N-CH 60V 230MA SOT-23](/photos/5/60/56043/bss138n_l6327_sml.jpg)
BSS138N L6327
Manufacturer Part Number
BSS138N L6327
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Specifications of BSS138N L6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.23 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
230mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSS138N L6327
BSS138NL6327INTR
BSS138NL6327XT
SP000074207
BSS138NL6327INTR
BSS138NL6327XT
SP000074207
Rev. 2.5
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
DD
D
=0.23 A pulsed
0.2
0.4
Q
12 V
gate
[nC]
0.6
48 V
0.8
30 V
1
page 7
14 Drain-source breakdown voltage
V
BR(DSS)
70
65
60
55
50
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
60
[°C]
100
BSS138N
140
2006-05-17
180