BSS138N L6327 Infineon Technologies, BSS138N L6327 Datasheet - Page 4

• Manufacturer Part Number: BSS138N L6327
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138N L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 41pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.23 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 230mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSS138N L6327; BSS138NL6327INTR; BSS138NL6327XT; SP000074207

Rev. 2.82
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.4
0.3
0.2
0.1
10
10
0
DS
-1
-2
-3
1
0
A
0
); T
)
1
limited by on-state
resistance
A
p
=25 °C; D =0
40
T
V
A
DS
80
10
[°C]
[V]
120
100 ms
100 µs
10 ms
1 ms
DC
10 µs
160
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.25
0.15
0.05
=f(t
0.2
0.1
10
10
10
10
A
0
3
2
1
0
); V
10
p
0
)
-5
0.5
0.02
0.1
0.2
0.05
0.01
GS
single pulse
10
≥10 V
-4
p
/T
10
40
-3
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
10
120
1
BSS138N
2009-02-11
160