BSS84P L6327 Infineon Technologies, BSS84P L6327 Datasheet - Page 7

• Manufacturer Part Number: BSS84P L6327
• Description: MOSFET P-CH 60V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84P L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSS84P L6327; BSS84PL6327INTR; BSS84PL6327XT; SP000082879

13 Typ. avalanche energy
E
I
15 Drain-source breakdown voltage
V
D
AS
(BR)DSS
= -0.17 A , V
Rev 2.4
mJ
= f (
-72
-68
-66
-64
-62
-60
-58
-56
-54
1.5
0.5
V
3
2
1
0
-60
25
BSS 84 P
T A
= f (
), parameter:
45
-20
T A
DD
65
)
20
= -25 V, R
85
60
105
100
GS
125
= 25
°C
°C
T A
T A
165
180
Page 7
14 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSS 84 P
0.2
Gate
D
= -0.17 A pulsed; T j = 25 °C
)
0.4
0,2
V
0.6
DS max
0.8
0,8 V
1
2006-12-05
BSS 84 P
DS max
1.2
nC
Q
Gate
1.5