BSS127 L6327 Infineon Technologies, BSS127 L6327 Datasheet
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Manufacturer Part Number
BSS127 L6327
Description
MOSFET N-CH 600V 21MA SOT-23
Manufacturer
Infineon Technologies
Specifications of BSS127 L6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 Ohm @ 16mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
21mA
Vgs(th) (max) @ Id
2.6V @ 8µA
Gate Charge (qg) @ Vgs
1nC @ 10V
Input Capacitance (ciss) @ Vds
28pF @ 25V
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
500 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.021 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247305
Rev. 1.47
Type
Features
• n-channel
• enhancement mode
• Logic level (4.5V rated)
• dv /dt rated
• Qualified according to AEC Q101
• 100%lead-free; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS127
®
Small-Signal-Transistor
Package
PG-SOT-23
j
=25 °C, unless otherwise specified
Pb-free
Yes
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Tape and Reel Information
L6327: 3000PCS/reel
T
T
T
I
V
di /dt =200 A/µs,
T
T
D
page 1
A
A
A
j,max
A
DS
=0.09 A,
=25 °C
=70 °C
=25 °C
=25 °C
=480 V,
=150 °C
Product Summary
V
R
I
D
DS
DS(on),max
0 (<250V)
-55 ... 150
55/150/56
Value
0.017
0.021
0.09
0.50
Marking
Sis
±20
PG-SOT-23
6
0.021 A
600
500
BSS127
Unit
A
kV/µs
V
W
°C
Ω
V
2010-07-29
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BSS127 L6327 Summary of contents
Type ® SIPMOS Small-Signal-Transistor Features • n-channel • enhancement mode • Logic level (4.5V rated) • dv /dt rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant Type Package BSS127 PG-SOT-23 Maximum ratings =25 °C, unless ...
Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 1.47 Symbol Conditions R thJA =25 °C, unless ...
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
Power dissipation P =f(T ) tot A 0.6 0.5 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by ...
Typ. output characteristics I =f =25 ° parameter 0.03 0.025 0.02 0.015 0.01 0.005 Typ. transfer characteristics I =f |>2 ...
Drain-source on-state resistance R =f =0.016 A; V DS(on 1000 900 800 700 600 98 % 500 400 300 200 100 0 -60 - Typ. capacitances C =f ...
Typ. gate charge V =f =0.01 A pulsed GS gate D parameter 120 0.1 0.2 0.3 Q gate 15 Gate charge waveforms ...
Package Outline: Footprint: Rev. 1.47 SOT-23 Packaging: page 8 BSS127 2010-07-29 ...
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...
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