BSS308PE L6327 Infineon Technologies, BSS308PE L6327 Datasheet
BSS308PE L6327
Manufacturer Part Number
BSS308PE L6327
Description
MOSFET P-CH 30V 2A SOT-23
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSS308PE_L6327.pdf
(9 pages)
Specifications of BSS308PE L6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1V @ 11µA
Gate Charge (qg) @ Vgs
5nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 15V
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000442474
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