UPA1918TE-T2-AT Renesas Electronics America, UPA1918TE-T2-AT Datasheet - Page 7

• Manufacturer Part Number: UPA1918TE-T2-AT
• Description: MOSFET 60V P-CH SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1918TE-T2-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 143 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 666pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
300
250
200
150
100
250
200
150
100
50
50
10
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
-0.01
-50
V
Pulsed
I
Pulsed
D
GS
= 2.0 A
SWITCHING CHARACTERISTICS
= 4.0 V
T
ch
-0.1
- Channel Temperature - C
0
I
I
D
D
-0.1
- Drain Current - A
- Drain Current - A
V
GS
= 4.0 V
10 V
50
-1
-1
V
V
R
T
DD
GS
100
G
-10
A
= 10
75°C
25°C
= 30 V
= 10 V
= 125°C
25°C
4.5 V
t
t
d(off)
d(on)
t
t
f
r
Data Sheet G15926EJ1V0DS
-100
150
-10
10000
1000
100
250
200
150
100
-12
-10
10
50
-8
-6
-4
-2
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
-0.1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
0
I
Pulsed
D
= 3.5 A
V
V
V
GS
DD
DS
3
-5
- Gate to Source Voltage - V
Q
- Drain to Source Voltage - V
= 48 V
G
-1
30 V
15 V
- Gate Charge - nC
6
-10
9
-10
I
D
V
f = 1.0 MHz
C
= 2.0 A
GS
-15
rss
= 0 V
12
PA1918
C
C
iss
oss
-100
-20
15
5