UPA507TE-T2-A Renesas Electronics America, UPA507TE-T2-A Datasheet - Page 4

• Manufacturer Part Number: UPA507TE-T2-A
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA507TE-T2-A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOS FET ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10
SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (T
Notes 1. Mounted on FR-4 board of 2500 mm
2
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Junction Temperature
Storage Temperature
2. Mounted on FR-4 board of 2500 mm
2. 50 Hz sine wave, 1 cycle
Note2
μ
s, Duty Cycle ≤ 1%
Note1
Note2
Note1
DS
GS
= 0 V)
= 0 V)
2
2
Data Sheet G16626EJ2V0DS
x 1.6 mm, t ≤ 5 sec
x 1.6 mm, t ≤ 5 sec.
V
V
I
I
P
T
V
I
I
T
T
D(DC)
D(pulse)
F(AV)
FSM
ch
J
stg
DSS
GSS
T
RRM
A
= 25°C)
−55 to +125
+125
0.57
−20
150
m8
m2
m8
30
10
1
°C
°C
°C
W
V
V
A
A
V
A
A
A
= 25°C)
μ
PA507TE