IPD30N03S2L-20 Infineon Technologies, IPD30N03S2L-20 Datasheet - Page 4

• Manufacturer Part Number: IPD30N03S2L-20
• Description: MOSFET N-CH 30V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N03S2L-20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 23µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000254466

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
70
60
50
40
30
20
10
100
0
10
1
DS
0
0.1
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
T
V
C
100
DS
[°C]
[V]
10
1 ms
150
100 µs
10 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
35
30
25
20
15
10
10
10
10
= f(t
10
5
0
-1
-2
-3
0
C
0
10
); V
p
-7
0.01
0.05
)
0.1
0.5
GS
10
≥ 10 V
p
-6
/T
50
single pulse
10
-5
10
T
t
C
-4
100
p
[°C]
[s]
10
-3
IPD30N03S2L-20
10
150
-2
10
2006-07-18
-1
200
10
0