AO4437 Alpha & Omega Semiconductor Inc, AO4437 Datasheet

MOSFET P-CH -12V -11A 8-SOIC

AO4437

Manufacturer Part Number
AO4437
Description
MOSFET P-CH -12V -11A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4437

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
47nC @ 4.5V
Input Capacitance (ciss) @ Vds
4750pF @ 6V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1031-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4437
Manufacturer:
AOS
Quantity:
8 000
Part Number:
AO4437
Manufacturer:
AOS/ 万代
Quantity:
20 000
Company:
Part Number:
AO4437
Quantity:
1 971
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4437 uses advanced trench technology to provide
excellent R
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO4437 is Pb-free (meets ROHS & Sony
259 specifications). AO4437L is a Green Product ordering
option. AO4437 and AO4437L are electrically identical.
AO4437
P-Channel Enhancement Mode Field Effect Transistor
A
S
S
S
G
DS(ON)
Top View
SOIC-8
, low gate charge and operation with gate
A
B
T
T
T
T
A
A
A
A
D
D
D
D
=25°C
=70°C
=25°C
=70°C
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
R
R
G
θJA
θJL
Features
V
I
R
R
R
ESD Rating: 4KV HBM
D
DS
DS(ON)
DS(ON)
DS(ON)
= -11 A (V
Maximum
-55 to 150
(V) = -12V
Typ
-12
-11
-20
2.1
±8
31
63
21
-9
3
< 16mΩ (V
< 20mΩ (V
< 25mΩ (V
D
S
GS
= -4.5V)
Max
40
75
30
GS
GS
GS
= -4.5V)
= -2.5V)
= -1.8V)
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

Related parts for AO4437

AO4437 Summary of contents

Page 1

... DS(ON) voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications ESD protected. Standard Product AO4437 is Pb-free (meets ROHS & Sony 259 specifications). AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical. SOIC-8 ...

Page 2

... AO4437 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4437 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -2.0V -8.0V 15 -1. 0.2 0.4 -V (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =-1. 0.6 0.8 1 0.2 1.4 1.2 V =-1. =-2. ...

Page 4

... AO4437 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5.00E+00 V =-6V DS 4.00E+00 I =-11A D 3.00E+00 2.00E+00 1.00E+00 0.00E+ Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) R DS(ON) T =25°C A limited 10.0 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA ...

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