SPD04P10P G Infineon Technologies, SPD04P10P G Datasheet - Page 3
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SPD04P10P G
Manufacturer Part Number
SPD04P10P G
Description
MOSFET P-CH 100V 4A TO252-3
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPD04P10P_G.pdf
(9 pages)
Specifications of SPD04P10P G
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 2.8A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 380µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
319pF @ 25V
Power - Max
38W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1000 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
38000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package
DPAK (TO-252)
Vds (max)
-100.0 V
Rds (on) (max) (@10v)
1,000.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000212230
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