AO4427 Alpha & Omega Semiconductor Inc, AO4427 Datasheet
AO4427
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AO4427 Summary of contents
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... AO4427 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4427/L uses advanced trench technology to provide excellent R , and ultra-low low gate DS(ON) charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. ...
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... AO4427 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4427 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -6V -10V -5V 20 -4. (Volts) DS Figure 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 I =-12. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS ...
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... AO4427 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-12. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1.0 1s 10s T =150°C J(Max) T =25° 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =40°C/W θJA 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...