BSP171P L6327 Infineon Technologies, BSP171P L6327 Datasheet - Page 6

• Manufacturer Part Number: BSP171P L6327
• Description: MOSFET P-CH 60V 1.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP171P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 2V @ 460µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 460pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP171P L6327; BSP171PL6327INTR; BSP171PL6327XT; SP000089226

Rev 2.4
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
500
400
300
200
100
10
10
10
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1.9 A; V
typ.
20
10
GS
Ciss
Coss
-V
Crss
T
98 %
=-10 V
j
DS
60
[°C]
[V]
100
20
140
180
30
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
2.5
1.5
0.5
10
10
=f(T
SD
3
2
1
0
-1
-2
1
0
-60
)
0
j
); V
j
GS
-20
=V
150 °C, typ
DS
0.5
20
; I
D
=-460 µA
-V
min.
T
max.
typ.
j
SD
60
[°C]
[V]
150 °C, 98%
100
1
25 °C, 98%
25 °C, typ
BSP171P
140
2007-02-08
180
1.5