IPD30N03S2L-10 Infineon Technologies, IPD30N03S2L-10 Datasheet - Page 5

• Manufacturer Part Number: IPD30N03S2L-10
• Description: MOSFET N-CH 30V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N03S2L-10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 50µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000254465

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
120
100
120
100
80
60
40
20
80
60
40
20
0
0
DS
GS
0
0
); T
); V
GS
j
j
DS
= 25 °C
10 V
= 6V
1
5 V
2
V
V
2
175 °C
GS
DS
[V]
[V]
4 V
3.5 V
3 V
2.5 V
4.5 V
25 °C
3
-55 °C
4
4
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
80
70
60
50
40
30
20
10
65
55
45
35
25
15
0
5
= (I
D
0
0
); T
3 V
D
); T
j
= 25°C
fs
GS
20
3.5 V
20
j
= 25 °C
40
40
4 V
I
I
D
D
60
60
[A]
[A]
IPD30N03S2L-10
80
4.5 V
80
10 V
100
100
2006-07-18
5 V
120
120